收藏本站
New Product
SiR878DP
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
? V DS /T J
? V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
100
50
- 5.5
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.2
2.8
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 100 V, V GS = 0 V
V DS = 100 V, V GS = 0 V, T J = 55 °C
V DS ?? 5 V, V GS = 10 V
V GS = 10 V, I D = 15 A
30
0.0114
± 100
1
10
0.014
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = 7.5 V, I D = 12 A
0.012
0.0148
?
V GS = 4.5 V, I D = 10 A
0.0152
0.019
Forward Transconductance a
g fs
V DS = 10 V, I D = 15 A
34
S
Dynamic
b
Input Capacitance
C iss
1250
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C oss
C rss
Q g
Q gs
Q gd
V DS = 50 V, V GS = 0 V, f = 1 MHz
V DS = 50 V, V GS = 10 V, I D = 10 A
V DS = 50 V, V GS = 7.5 V, I D = 10 A
V DS = 50 V, V GS = 4.5 V, I D = 10 A
680
50
28.3
21.6
13.6
3.7
6.4
43
33
20.5
pF
nC
Gate Resistance
R g
f = 1 MHz
0.5
2.3
4.6
?
Turn-On Delay Time
t d(on)
9
18
Rise Time
Turn-Off Delay Time
t r
t d(off)
V DD = 50 V, R L = 5 ?
I D ? 10 A, V GEN = 10 V, R g = 1 ?
11
28
22
55
Fall Time
Turn-On Delay Time
t f
t d(on)
10
12
20
24
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 50 V, R L = 5 ?
I D ? 10 A, V GEN = 7.5 V, R g = 1 ?
13
27
7
26
50
14
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
40
80
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 4 A
I F = 10 A, dI/dt = 100 A/μs, T J = 25 °C
0.76
45
50
21
24
1.1
90
100
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65939
S10-2685-Rev. B, 22-Nov-10
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SIR888DP-T1-GE3 MOSFET N-CH 25V 40A PPAK 8SOIC
SIR890DP-T1-GE3 MOSFET N-CH 20V 50A PPAK 8SOIC
SIR892DP-T1-GE3 MOSFET N-CH 25V 50A PPAK 8SOIC
SIR928-6C-F LED IR SIDE GAA1AS WATER CLR AXL
SIRA02DP-T1-GE3 MOSFET N-CH 30V 50A SO-8
SIRA04DP-T1-GE3 MOSFET N-CHAN 30V(D-S)POWERPAK
SIRA10DP-T1-GE3 MOSFET N-CH 30V 30A SO-8
SIS412DN-T1-GE3 MOSFET N-CH D-S 30V 1212-8 PPAK
相关代理商/技术参数
SIR880ADP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 80 V (D-S) MOSFET
SIR880ADP-T1-GE3 功能描述:MOSFET 80V 6.3mOhm@10V 60A N-Ch MV T-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR880DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 80 V (D-S) MOSFET 100 % UIS Tested
SIR880DP_1011 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 80 V (D-S) MOSFET
SIR880DP_1209 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 80 V (D-S) MOSFET
SIR880DP-T1-GE3 功能描述:MOSFET 80V 5.9mOhm@10V 60A N-Ch MV T-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR880DP-T1-GE3 制造商:Vishay Siliconix 功能描述:N CH MOSFET
SIR882ADP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100 V (D-S) MOSFET